首页> 外国专利> THERMOELECTRIC MATERIAL MADE FROM A DOPED OR UNDOPED COBALT ANTIMONY SULFIDE ALLOY WITH SELENIUM, AND METHODS FOR OBTAINING SAME

THERMOELECTRIC MATERIAL MADE FROM A DOPED OR UNDOPED COBALT ANTIMONY SULFIDE ALLOY WITH SELENIUM, AND METHODS FOR OBTAINING SAME

机译:含或不含钴的硫化锑锑合金制成的热电材料,以及获得该材料的方法

摘要

The invention mainly concerns a thermoelectric compound made from a doped or undoped cobalt antimony sulfide alloy with selenium, of formula CoSbS1-xSex, x having a value 0 x 1. Advantageously, the compound of the invention is doped with tellurium on the antimony site. The invention also concerns methods for producing such compounds comprising at least a synthesis step and a sintering compaction step, and optionally an intermediate nanostructuring step.
机译:本发明主要涉及一种由具有硒的掺杂或未掺杂的钴锑硫化钴合金制成的热电化合物,其式为CoSbS1-xSex,x的值为0

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