ReRAM Using Stacking Structure of Iron Oxide Graphene Oxide

摘要

A nonvolatile memory device according to the present invention includes a lower electrode provided on a semiconductor substrate, a resistance layer provided on the lower electrode, and an upper electrode provided on the resistance layer. The resistance layer comprises a graphene oxide thin film and an iron oxide thin film, and has a structure where the iron oxide thin film is laminated on the graphene oxide thin film. The resistance value of the resistance layer is changed according to a voltage applied to the upper electrode. It is possible to provide a nonvolatile memory device with excellent reproducibility.