ALD METHOD AND APPARATUS FOR FORMING ALD OXIDE LAYER

摘要

The present invention relates to an apparatus to form an ALD oxide layer and a method thereof. According to the present invention, the apparatus comprises: a gas inlet unit which receives hydrogen and oxygen for a radical reaction and reaction gas including silicon precursors; a fuzzy gas inlet unit which receives fuzzy gas; a gas reaction chamber which reacts with the reaction gas supplied from the reaction gas inlet unit to generate a radical; an ALD oxide layer forming chamber which accommodates the gas reaction chamber inside to make the radical generated by the gas reaction chamber with the Si precursors and to form an ALD oxide layer; a susceptor placed in the ALD oxide layer forming chamber to mount a substrate on a top side, on which the ALD oxide layer will be formed; and a gas exhaust unit which uses the fuzzy gas supplied from the fuzzy gas inlet unit to discharge unreacted gas and gas remaining after the reaction. The present invention provides a method to form the ALD oxide layer and the apparatus thereof, which are able to improve thickness uniformity of an ALD layer.