Ion source head and ion implantation apparatus including the same

摘要

The present invention provides an ion source head capable of suppressing production of reaction byproducts and an ion injection device including the same. According to an embodiment of the present invention, the ion source head comprises: a reaction chamber providing an ionization space; a plasma generating coil receiving a high frequency power, forming an induction magnetic field in the reaction chamber, and located on an external surface of the reaction chamber in order to ionize a source gas supplied to the reaction chamber; and a high frequency power source applying the high frequency power to the plasma generating coil.