The present invention provides a capacitively coupled plasma (CCP) device capable of uniformly etching or depositing a substrate through a plasma process and processing contaminants remaining on the substrate when processing plasma. The CCP device of the present invention comprises: a chamber in which the substrate is received; an electrode plate installed in an upper part in the chamber; a substrate holder which is installed in a lower part in the chamber, and in which the substrate is placed; a power part supplying high frequency power to at least one of the electrode plate and the substrate holder so that CCP is generated between the electrode plate and the substrate holder; and a rotation shaft to be used as a rotation center of the electrode plate. When the high frequency power is supplied from the power part to the electrode plate or the substrate holder, the electrode plate can rotate 360 degrees or more around the rotation shaft in the chamber.
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