Vertical high voltage half conductor apparatus and method of manufacturing a vertical high voltage half conductor device

摘要

Vertical high voltage half conductor a device comprising:a semiconductor substrate (1) of a first conductivity type;a first semiconductor layer (2) of the first conductivity type, which are placed on the semiconductor substrate (1) is formed and an impurity concentration lower than that of the semiconductor substrate (1) comprises;a second semiconductor layer (3) of a second conductivity type, which selectively to a surface of the first semiconductor layer (2) is formed and an impurity concentration higher than that of the first semiconductor layer (2) comprises;a base layer (4) of the second conductivity type, which on the first semiconductor layer (2) and the second semiconductor layer (3) is arranged;a first - conductivity type - source - region (7) which selectively in a surface layer of the base layer (4) is formed;an n - against layer (6) of the first conductivity type, which is adapted the base layer (4) from a surface and to pass through the first semiconductor layer (2) to achieve;a gate - electrode layer (10), which is formed by means of a gate - insulating layer (9) in at least a portion of an exposed portion of a surface of the base layer (4) between the source - region (7) and the n - against layer (6) is arranged;a source - electrode (11) in common contact with surfaces of the source - region (7) and the base layer (4); anda drain - electrode (12), which on a rear side of the semiconductor substrate (1) is arranged.Sections of the second semiconductor layer (3) in areas with one another under the n - against layers (6) are connected.