SILICON CARBIDE INK CRYSTAL, SILICON CARBIDE INKRISTAL WAFER, SILICON CARBIDE INKRISTAL PEITAXIAL WAFER AND ELECTRONIC DEVICE

摘要

A silicon carbide single crystal (2,3) comprises: threaded dislocations (20) each having a dislocation line (21) extending through a C-plane and a Burgers vector (bv) containing at least one component in a C-axis direction, having. In addition, the density of thread offsets (θ1), each of which is formed by an orientation of the Burger vector and an orientation of the dislocation line that are greater than 0 ° and within 40 °, is set to 300 dislocations / cm or less. Further, the density of thread dislocations where the angles are greater than 40 ° is set to 30 dislocations / cm or less.