To provide a semiconductor device which makes it possible to confirm the life of a gate insulative film by an actual article in a situation of being in practical use.SOLUTION: A semiconductor device 50 comprises: a gate electrode 7 formed on a gate insulative film 6; a dummy gate electrode 7d formed on a dummy gate insulative film 6d; a gate pad 10 connected to the gate electrode 7; and a dummy gate pad 10d connected to the dummy gate electrode 7d. The gate electrode 7 has the function of bringing the semiconductor device formed on an epitaxial substrate 20 to electrical conduction when a voltage equal to or higher than a threshold voltage is applied. However, the dummy gate electrode 7d does not have the function of bringing the semiconductor device formed on the epitaxial substrate 20 to electrical conduction.SELECTED DRAWING: Figure 2
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