Method introduces dopant to group XIII nitride self-supported substrates, organizes XIII nitride self-supported substrates, manufactures semiconductor element, manufactures the vanguard, the vanguard

摘要

PROBLEM TO BE SOLVED: To provide a method introducing a dopant to a group XIII nitride self-supporting substrate by which a group XIII nitride self-supporting substrate that has a high dopant concentration in the vicinity of a Ga surface can be obtained with ease and with certainty, and to provide a semiconductor element manufactured by using the group XIII nitride self-supporting substrate obtained by the method.SOLUTION: A method for introducing a dopant to a group XIII nitride self-supporting substrate whose one principal surface is a group XIII element surface and whose other principal surface is a group XV element surface surface, includes: a melt annealing step of holding the group XIII nitride self-supporting substrate in an immersed state into a mixed melt of a dopant source metal that is a single metal of an element introduced as a dopant, and a metal Ga, and diffusing the dopant from the mixed melt to the group XIII nitride self-supporting substrate to introduce the dopant to the group XIII nitride self-supporting substrate; and a polishing and removing step of polishing the group XV element surface side of the group XIII nitride self-supporting substrate subjected to the melt annealing step to remove a diffusion region of the dopant at the group XV element surface side.