Differential weight reading of an analog memory element in crosspoint array utilizing current subtraction transistors

摘要

A resistive processing unit includes an analog memory element coupled to a read row line and a read column line, a first current subtraction field-effect transistor (FET) coupled to the read row line and the analog memory element, and a second current subtraction FET coupled to the read column line and the analog memory element. The analog memory element is configured to store a weight value as its conductance. Application of a gate pulse voltage to one of the first current subtraction FET and the second current subtraction FET during application of a read pulse voltage to one of the read row line and the read column line reduces a measured conductance of the analog memory element, and the reduction of the measured conductance of the analog memory element provides net current for the stored weight value.