Gas barrier film, film substrate provided with gas barrier film, and electronic device including the film substrate

摘要

A gas barrier film includes two or more first barrier layers each made of a first inorganic material and one or more second barrier layers each made of a second inorganic material different from the first inorganic material. Each of the two or more first barrier layers and each of the one or more second barrier layers are alternately stacked. The first inorganic material comprises aluminum oxide. Each of the two or more first barrier layers has a thickness of 3 nm or more. The total thickness of the two or more first barrier layers is 20 nm or less. The two or more first barrier layers and the one or more second barrier layers are formed by atomic layer deposition.