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Wafer carrier having provisions for improving heating uniformity in chemical vapor deposition systems

机译:晶片载体,具有改善化学气相沉积系统中加热均匀性的措施

摘要

A wafer carrier and methods of making the same for use in a system for growing epitaxial layers on one or more wafers by chemical vapor deposition. The wafer carrier includes wafer retention pockets recessed in its body. A thermally-insulating spacer is situated at least partially in the at least one wafer retention pocket and arranged to maintain a spacing between the peripheral wall surface and the wafer, the spacer being constructed from a material having a thermal conductivity less than a thermal conductivity of the wafer carrier such that the spacer limits heat conduction from portions of the wafer carrier body to the wafer. The wafer carrier further includes a spacer retention feature that engages with the spacer and includes a surface oriented to prevent centrifugal movement of the spacer when subjected to rotation about the central axis.
机译:晶片载体及其制造方法,用于通过化学气相沉积在一个或多个晶片上生长外延层的系统中。晶片载体包括凹入在其主体中的晶片保持凹穴。绝热隔离件至少部分地位于至少一个晶片保持凹穴中,并且布置成维持周向壁表面和晶片之间的间隔,该隔离件由导热率小于导热率的材料制成。晶片载体,使得隔离物限制了从晶片载体主体的部分到晶片的热传导。晶片载体还包括与间隔物接合的间隔物保持特征,并且包括定向为防止间隔物在绕中心轴旋转时离心运动的表面。

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