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Neuron peripheral circuits for neuromorphic synaptic memory array based on neuron models

机译:基于神经元模型的神经形态突触记忆阵列的神经元外围电路

摘要

A neuromorphic memory system including neuromorphic memory arrays. Each neuromorphic memory array includes rows and columns of neuromorphic memory cells. A column of postsynaptic circuits is electrically coupled to postsynaptic spike timing dependent plasticity (STDP) lines. Each postsynaptic STDP line is coupled to a row of neuromorphic memory cells. A column of summing circuits is electrically coupled to postsynaptic leaky integrate and fire (LIF) lines. Each postsynaptic LIF line is coupled to the row of neuromorphic memory cells at a respective memory array. Each summing circuit provides a sum of signals from the postsynaptic LIF lines to a respective postsynaptic circuit.
机译:一种神经形态存储系统,包括神经形态存储阵列。每个神经形态存储阵列包括神经形态存储单元的行和列。一列突触后电路电耦合至突触后尖峰时序相关可塑性(STDP)线。每个突触后STDP线都耦合到一行神经形态记忆细胞。一列求和电路电耦合到突触后泄漏积分和发射(LIF)线。每个突触后LIF线在相应的存储器阵列处耦合至神经形态存储单元的行。每个求和电路提供从突触后LIF线到相应突触后电路的信号总和。

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