METHOD FOR DEPOSITING TRANSITION METAL NITRIDE FILM ON SUBSTRATE BY ATOMIC LAYER DEPOSITION AND RELATED DEPOSITION DEVICE

摘要

Provided are a device and a method for depositing a transition metal nitride film on a substrate by atomic layer deposition in a reaction space defined by at least one chamber wall and a shower head. The device can include: a substrate support disposed within the reaction space and formed to support at least one substrate; and a temperature control system for controlling the temperature of at least one chamber wall at certain portions of the at least one chamber wall exposed to gaseous reactants. The device can also include a temperature control system for controlling the temperature of a shower head and the temperature control system for controlling the temperature of a shower head is formed to control the temperature of a shower head at a temperature of approximately 80C to approximately 160C. The method can include: a step of providing at least one substrate on the substrate support in the reaction space; and a step of controlling the temperature of the at least one chamber wall and the temperature of the shower head at a plurality of portions of the at least one chamber wall exposed to the gaseous reactants. The method can also include a step of alternately and sequentially supplying at least two gaseous reactants to the reaction space, and the temperature of the shower head is controlled at a temperature of approximately 80C to approximately 160C.;COPYRIGHT KIPO 2019