DMOS TRENCH DMOS DEVICE WITH IMPROVED TERMINATION STRUCTURE FOR HIGH VOLTAGE APPLICATIONS

摘要

A termination structure for a semiconductor device is provided. The termination structure includes a semiconductor substrate including an active region and a termination region. An end trench is provided in the termination region to extend from a boundary of the active region to an edge of the semiconductor substrate. A MOS gate is formed in the sidewall of the termination trench adjacent the boundary. At least one guard ring trench is formed in the termination region at one side of the termination trench at a distance from the active region. A termination structure oxide layer is formed in the end trench and the guard ring trench. A first conductive layer is formed on the back surface of the semiconductor substrate. A second conductive layer is formed on top of the active region and the termination region.