Method for a simplified integration of high-precision thin-film resistors

摘要

A method of fabricating an integrated circuit, the method comprising: (a) depositing and patterning an electrically resistive material layer of an alloy such as NiCr, NiCrAl or SiCr serving as a thin film resistor (TFR), (b) depositing a first electrically insulating layer (IMDn) on the electrically resistive layer of the TFR, (c) depositing an electrically conductive metal layer (METn) of an electrically conductive material, (d) leaving a region without the electrically conductive metal layer (METn), the region (CA) as an opening in the electrically conductive metal layer is formed, and wherein the region overlaps the electrically resistive layer of the TFR, (e) depositing a second electrically insulating layer (IMDn + 1) on the electrically conductive metal layer (METn), (f) etching a first via hole (TFVIA) through the second electrically insulating layer (IMDn + 1), the area of the opening (CA) without the electrically conductive metal layer and through the first electrically insulating layer (IMDn) down to the electrically resistive layer of the TFR and (g) depositing an electrically conductive material in the first via opening (TFVIA) to electrically connect the electrically conductive metal layer (METn) and the electrically resistive layer of the TFR.