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Insulated gate bipolar transistor (IGBT) with high avalanche withstand
Insulated gate bipolar transistor (IGBT) with high avalanche withstand
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机译:具有高雪崩承受能力的绝缘栅双极晶体管(IGBT)
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摘要
A semiconductor device includes a semiconductor layer between a collector electrode and an emitter electrode. The semiconductor layer includes a base region of a first conductivity type, a first collector layer of a second conductivity type between the collector electrode in a cell region in which an emitter layer is arranged and the base layer, and a second collector layer of the second conductivity type between the collector electrode in a boundary region in which a gate wiring is arranged and the base layer. A peak value of an impurity concentration of the second conductivity type in the second collector layer is higher than a peak value of an impurity concentration of the second conductivity type in the first collector layer.
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