GATE-ALL-AROUND TRANSISTOR BASED NON-VOLATILE MEMORY DEVICES

摘要

A semiconductor device including a gate-all-around based non-volatile memory device includes isolated channels including tunnel dielectric material disposed around gate-all-around field effect transistor (GAA FET) channels, at least one floating gate including a first gate material encapsulating the isolated channels, and at least one control gate including a second gate material encapsulating the isolated channels.