PROTECTION OF PHOTOMASKS FROM 193nm RADIATION DAMAGE USING THIN COATINGS OF ALD Al2O3.

摘要

The invention relates to a method used in a photolithographic process comprising depositing a film of Atomic layered Deposition (ALD) Al₂O₃ on a photomask, subjecting said film of Al₂O₃ on the photomask to a plasma treatment and then irradiating the deposited film of ALD Al₂O₃ on the coated photomask at a wavelength of 193 nm.