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PLASMA GENERATION APPARATUS, SUBSTRATE TREATING APPARATUS INCLUDING THE SAME, AND CONTROL METHOD FOR THE PLASMA GENERATION APPARATUS
PLASMA GENERATION APPARATUS, SUBSTRATE TREATING APPARATUS INCLUDING THE SAME, AND CONTROL METHOD FOR THE PLASMA GENERATION APPARATUS
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机译:等离子体发生装置,包括该等离子体发生装置的基质处理装置以及等离子体发生装置的控制方法
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摘要
A substrate treating apparatus includes a chamber having a space therein in which a substrate is treated, a support unit that supports the substrate in the chamber, a gas supply unit that supplies gas into the chamber, and a plasma generation unit that excites the gas in the chamber into a plasma state. The plasma generation unit includes a high-frequency power supply, a first antenna connected to one end of the high-frequency power supply, a second antenna connected with the first antenna in parallel, and a current divider that distributes electric current to the first antenna and the second antenna. The current divider includes a first capacitor disposed between the first antenna and the second antenna, a second capacitor connected with the second antenna in parallel, and a third capacitor connected with the second antenna in series. The second capacitor and the third capacitor are implemented with a variable capacitor.
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