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ATOMIC LAYER DEPOSITION AND PHYSICAL VAPOR DEPOSITION BILAYER FOR ADDITIVE PATTERNING
ATOMIC LAYER DEPOSITION AND PHYSICAL VAPOR DEPOSITION BILAYER FOR ADDITIVE PATTERNING
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机译:原子层和物理气相沉积双分子层
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摘要
A method for manufacturing a semiconductor device includes forming a memory element in a dielectric layer. A first conductive layer is deposited on the dielectric layer and the memory element by atomic layer deposition, and a second conductive layer is deposited on the first conductive layer by physical vapor deposition. In the method, the first and second conductive layers are patterned into an electrode on the memory element.
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