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GATE-ALL-AROUND TRANSISTOR BASED NON-VOLATILE MEMORY DEVICES
GATE-ALL-AROUND TRANSISTOR BASED NON-VOLATILE MEMORY DEVICES
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机译:基于全栅晶体管的非易失性存储器设备
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摘要
A method for fabricating a semiconductor device including a gate-all-around based non-volatile memory device includes forming gate-all-around field effect transistor (GAA FET) channels, depositing tunnel dielectric material around the GAA FET channels to isolate the GAA FET channels, forming a floating gate, including depositing first gate material over the isolated GAA FET channels, and forming at least one control gate, including depositing second gate material over the isolated GAA FET channels.
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