VIA ETCHING METHOD AND CIRCUIT DETECTION METHOD FOR THIN FILM TRANSISTOR ARRAY SUBSTRATE

摘要

A via etching method and a circuit detection method for a thin film transistor array substrate. The via etching method comprises: adjusting an included angle between a base supporting a sample to be etched and the center of an ion beam for etching said sample to a preset angle of greater than 0 degrees and less than 90 degrees (S101); and etching a second film layer and a first film layer of said sample until an etched surface of the first film layer is sloped relative to a surface of the base so as to form a via extending through the second film layer and partially extending through the first film layer in the thickness direction thereof (S102). The invention prevents over-etching or under-etching of a first film layer, such that the first film layer can be effectively exposed at a via, thereby ensuring favorable electrical contact between an electrode subsequently formed in the via and the first film layer.