GAP-FILLING METHOD FOR HIGH ASPECT RATIO STRUCTRUE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING SAME

摘要

The present technology relates to a gap-filling method capable of gap-filling horizontal and vertical recesses having a high aspect ratio without voids. A high aspect ratio structure gap-filling method comprises: a step of forming a gap-filling target structure comprising a recess; a step of forming a first layer having a first opening in the recess; a step of exposing the first layer to an oxidation process to form an oxide of the first layer which seals an inlet of the first opening; a step of selectively removing the oxide of the first layer to form a second opening having a wider inlet than that of the first opening; and a step of forming a second layer gap-filling the second opening.;COPYRIGHT KIPO 2020