OTS PHASE CHANGE RANDOM ACCESS MEMORY ELEMENT FOR PREVENTING FALSE TURN-ON OF OVONIC THRESHOLD SWITCH AND MAPPING OPERATION METHOD OF THE SAME

摘要

Disclosed are a phase change memory element for preventing false turn-on of an ovonic threshold switch (OTS) and a mapping operation method thereof. According to an embodiment, the phase change memory element comprises: a plurality of bit lines; a plurality of source lines disposed to cross the bit lines; a plurality of memory cells disposed at intersections of the bit lines and the source lines, respectively, while each of the memory cells includes a phase change layer and an OTS; and a control unit for performing a mapping operation of determining a mid bias to be applied to unselected source lines based on a total resistance distribution of the memory cells in order to prevent false turn-on of an OTS included in a half-selected memory cell disposed at each of intersections of the unselected source lines except a bit line selected among the bit lines and a source line selected among the source lines.