Integrated injection logic circuit device

摘要

This study involves integrated injection logic elements,Perche formed by diffusion of p-type impurities in the specified field of semiconductor substrate,The P + type impurity is injected into the designated area of fivier,The diffusion region of P + impurity formed by diffusion,Do not overlap the diffusion region of P + impurity above at least one side, and inject n-type impurity into the above-mentioned pluml,Multiple N + impurity diffusion regions formed by diffusion,As mentioned above, the N + impurity diffusion region and P + impurity diffusion region do not overlap at least,In the absence of engineering changes or additions, the collector area of output transistors can be expanded to reduce the re combination of basic fields, thus increasing the current income and achieving stable logical effect.