The method for increasing the surface area of charge storage electrode by forming hemispheric grains on the electrode surface, includes the steps of forming and etching a HPSG layer (6) on the substrate into a MOSFET structure to form a contact hole into the layer (6), depositing a 1st conducting layer (7) thereon to form a thick oxide film (9) thereon to pattern the film (9), depositing a 2nd conducting layer (11) on the pattern (9A) to deposit and etch a photoresist film thereon to form a 2nd conductive pattern (11A), and removing the residual photoresist to form and pattern a 3rd conducting layer (13) having hemispheric grains on the exposed layers (9A,11A) to form a charge storage electrode (50), thereby increasing the capacitance.
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