A method for fabricating an OxRAM type memory location, including the steps of providing a stack including a superposition of a first layer that includes a first material made of Ti at more than 30% by mole fraction; a second layer made of HfO2 positioned under the first layer; via an ion implantation of a second material chosen from Xe, Kr or Ar in the first layer, carrying out an implantation of the first material in the second layer by collision with recoil effect in the first layer.
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