The rapid development of photovoltaic industry is causing many researches on the refining of silicon, especially the purification of silicon by metallurgical method from the metallurgical-grade silicon (MG-Si). The removal of phosphorus and boron is one of the major problems on the refining of MG-Si to Solar-grade silicon (SoG-Si). At present, the removal method of phosphorous and boron by slagging of CaO-SiO2-CaF2 and acid leaching treatment is being researched. It was found that the best removal ratio of phosphorous and boron could reach up to 81% and 92%. Meanwhile, the principle of removal of phosphorous and boron has been studied.
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