FTIR and XPS Analysis of Directly Bonded Si/Si Interface

摘要

【中文文摘】通过新颖的键合方法实现了Si/Si直接键合。采用傅里叶红外透射谱(FTIR)对Si/Si键合界面进行了研究,结果表明,高温退火样品的界面组分为Si和O,无OH和H网络存在。X射线光电子谱(XPS)测试结果进一步表明,界面主要为单质Si和SiOx混合网络,且随着退火温度的升高,界面层Si-Si直接成键的密度也越高。【英文文摘】The Si/Si direct bonding has been achieved by a new bonding technology. Fourier transform infrared spectrum(FTIR) and X-ray photoelectron spectroscopy(XPS) are used to analyze the interface of Si/Si bonding. The results show that there are notinfrared absorbtion peak related to the Si-H bonding and Si-OH bonding in the interface at high temperature, and the interface is consisted of Si and SiO_x. In addition, the research indicates also that the Si/Si bonding density is increased with the increase of bonding temperature.