Growth and characterization of Si-based light-emitting diode with beta-FeSi2-particles/Si multilayered active region by molecular beam epitaxy

摘要

We fabricated single-, double- and triple-layered beta-FeSi2-particles structure on Si(001) substrates by reactive deposition epitaxy (RDE) for beta-FeSi2 and by molecular beam epitaxy (MBE) for Si, and realized electroluminescerice (EL) at 310K. Photoluminescence (PL) measurements revealed that the 77K PL intensity of beta-FeSi2 increased almost proportionally with the number of beta-FeSi2-particles/Si layers. It was also found that the multilayered structure enhanced the EL intensity of beta-FeSi2 particularly at low temperatures.