【中文摘要】 用 Si H4 气体的减压 CVD法 ,在氧化硅以及石英基板上自然形成了高密度的 (～ 10 11cm-2 )纳米尺寸的半球状硅晶粒 (硅量子点 ) ,并且对其光学吸收和发光 (Photo- luminescence,PL)特性进行了评价。用表面热氧化了的硅量子点样品 ,在室温条件且在高于 1.2 e V以上的能量范围内观察到了 PL谱。随着量子点尺寸的减少 ,PL谱的光学吸收限移向高能方向。 PL谱的峰值能呈现大幅度的 (约 0 .9e V)斯塔克移动 ,并且 PL谱的强度几乎与温度无关 ,说明发光来自与局域能级相关联的发光和复合过程。 【英文摘要】 Using the low pressure CVD method with SiH 4 gas, we have accumulated the silicon quantum dots in self assembled and nano sized on a silica glass substrate. The optical absorption and photoluminescene spectra have been observed. With decreasing the size of silicon quantum dot, the limit of optical absorption shifts to higher energy. The intensity of photoluminescence spectrum is independent of temperature, which means that the photoluminesce...
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机译：【中文摘要】 用 Si H4 气体的减压 CVD法 ,在氧化硅以及石英基板上自然形成了高密度的 (～ 10 11cm-2 )纳米尺寸的半球状硅晶粒 (硅量子点 ) ,并且对其光学吸收和发光 (Photo- luminescence,PL)特性进行了评价。用表面热氧化了的硅量子点样品 ,在室温条件且在高于 1.2 e V以上的能量范围内观察到了 PL谱。随着量子点尺寸的减少 ,PL谱的光学吸收限移向高能方向。 PL谱的峰值能呈现大幅度的 (约 0 .9e V)斯塔克移动 ,并且 PL谱的强度几乎与温度无关 ,说明发光来自与局域能级相关联的发光和复合过程。 【英文摘要】 Using the low pressure CVD method with SiH 4 gas, we have accumulated the silicon quantum dots in self assembled and nano sized on a silica glass substrate. The optical absorption and photoluminescene spectra have been observed. With decreasing the size of silicon quantum dot, the limit of optical absorption shifts to higher energy. The intensity of photoluminescence spectrum is independent of temperature, which means that the photoluminesce...
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