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Photoelectrochemical study of influence factors on corrosion resistance of cupronickel B30 in simulated water

机译:光电化学研究模拟水中白铜B30耐蚀性的影响因素

摘要

Influence factors on semiconduction properties of oxide films on a cupronickel electrode in the simulated water was studied by cyclic voltammetry and photocurrent response method. The cupronickel electrode showed p-type photoresponse, which came from CU2O layer on its surface. The photoresponse changed to n-type in the simulated water. The transition from p-type to n-type might be related to the doping of Cl- and SO42- anions into CU2O film. It did not show n-type photoresponse when the cupronickel electrode was immersed in the simulated water containing some sulfide. It was shown that the degree of corrosion increased with the concentration of these anions and temperature. In addition, as the pH increased between 7 and 9, the corrosion resistance of B30 was enhanced, while it lowered as the pH was beyond 9.
机译:通过循环伏安法和光电流响应法研究了模拟水中白铜电极上氧化膜半导电性能的影响因素。白铜电极表现出p型光响应,其来自表面的CU2O层。在模拟水中,光响应变为n型。从p型到n型的转变可能与将Cl-和SO42-阴离子掺杂到CU2O膜中有关。当将白铜电极浸入含有某些硫化物的模拟水中时,它没有显示n型光响应。结果表明,腐蚀程度随这些阴离子的浓度和温度的升高而增加。另外,随着pH在7和9之间增加,B30的耐腐蚀性增强,而当pH超过9时,B30的耐腐蚀性降低。

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