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Low threshold lasing of GaN-based vertical cavity surface emitting lasers with an asymmetric coupled quantum well active region

机译：具有非对称耦合量子阱有源区的GaN基垂直腔表面发射激光器的低阈值激射

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National High Technology Research and Development Program of China [2006AA03Z409]; National Science Foundation of China [60876007]

机译：国家高技术研究发展计划[2006AA03Z409]；国家科学基金[60876007]

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Zhang J. Y.; Cai L. E.; Zhang B. P.; Li S. Q.; Lin F.; Shang J. Z.; Wang D. X.; Lin K. C.; Yu J. Z.; Wang Q. M.; 王德祥;
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年度 2008
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1. Low Threshold Lasing Of Gan-based Vertical Cavity Surface Emitting Lasers With An Asymmetric Coupled Quantum Well Active Region [J] . Jiang-Yong Zhang, Li-E Cai, Bao-Ping Zhang, Applied Physicsletters . 2008,第19期

机译：具有非对称耦合量子阱有源区的基于Gan的垂直腔表面发射激光器的低阈值激光发射
2. Low-threshold continuous-wave operation of an oxide-confined vertical cavity surface emitting laser based on a quantum dot active region and half-wave cavity [J] . Huffaker D.L., Graham L.A. Electronics Letters . 1997,第14期

机译：基于量子点有源区和半波腔的氧化物限制垂直腔表面发射激光器的低阈值连续波操作
3. Coupled-mode structure in oxide aperture vertical-cavity surface-emitting lasers and its effects on lasing threshold [J] . Riyopoulos S. Journal of the Optical Society of America, B. Optical Physics . 2003,第1期

机译：氧化物孔径垂直腔面发射激光器的耦合模结构及其对激光阈值的影响
4. Vertical cavity surface emitting lasers with InAs-InGaAs quantum dot active regions on GaAs substrates emitting at 1.3 /spl mu/m [C] . Lott, J.A., Ledentsov, . 2000

机译：在GaAs衬底上具有InAs-InGaAs量子点有源区的垂直腔表面发射激光器，发射速率为1.3 / spl mu / m
5. Design of vertical cavity surface-emitting lasers with strained and unstrained quantum well active regions. [D] . Corzine, Scott William. 1993

机译：具有应变和非应变量子阱有源区的垂直腔面发射激光器的设计。
6. On the importance of cavity-length and heat dissipation in GaN-based vertical-cavity surface-emitting lasers [O] . W. J. Liu, X. L. Hu, L. Y. Ying, -1

机译：GaN基垂直腔面发射激光器中腔长和散热的重要性
7. Low threshold lasing of GaN-based vertical cavity surface emitting lasers with an asymmetric coupled quantum well active region [O] . Zhang JY, Cai LE, Zhang BP, 2008

机译：具有非对称耦合量子阱有源区的GaN基垂直腔表面发射激光器的低阈值激射

Low threshold lasing of GaN-based vertical cavity surface emitting lasers with an asymmetric coupled quantum well active region

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