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Measurement and analysis of the characteristic parameters for the porous silicon/silicon using photovoltage spectra

机译:利用光电压谱测量和分析多孔硅/硅的特征参数

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摘要

The photovoltage spectra of the porous silicon/silicon (PS/Si) formed on the p-type silicon substrates of [111] and [100] orientation by different electrochemical anode etching conditions are measured. The photovoltage expressions with relation to the characteristic parameters are derived. The characteristic parameters: the bandgap, the carrier lifetime, and the intrinsic carrier concentration of the porous silicon layer, and the heterojunction barrier width of the PS/Si, are calculated from the measured photovoltage by using the theoretical expressions. Some calculated results are compared with the experiments. It is shown that the results are basically reasonable. (C) 2000 Elsevier Science B.V. All rights reserved.
机译:测量通过不同的电化学阳极蚀刻条件在[111]和[100]取向的p型硅衬底上形成的多孔硅/硅(PS / Si)的光电压谱。推导了与特征参数有关的光电压表达式。使用理论表达式,根据测得的光电压计算出多孔硅层的带隙,载流子寿命和本征载流子浓度以及PS / Si的异质结势垒宽度等特性参数。一些计算结果与实验进行了比较。结果表明,该结果基本合理。 (C)2000 Elsevier Science B.V.保留所有权利。

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