Measurement and analysis of the characteristic parameters for the porous silicon/silicon using photovoltage spectra

摘要

The photovoltage spectra of the porous silicon/silicon (PS/Si) formed on the p-type silicon substrates of [111] and [100] orientation by different electrochemical anode etching conditions are measured. The photovoltage expressions with relation to the characteristic parameters are derived. The characteristic parameters: the bandgap, the carrier lifetime, and the intrinsic carrier concentration of the porous silicon layer, and the heterojunction barrier width of the PS/Si, are calculated from the measured photovoltage by using the theoretical expressions. Some calculated results are compared with the experiments. It is shown that the results are basically reasonable. (C) 2000 Elsevier Science B.V. All rights reserved.