【中文摘要】化学机械抛光 (CMP)技术是同时利用化学和机械作用来获得固体表面亚微米尺度上平整性非常有效的方法 ,从 90年代初期起已成为制备高质量镜头和镜面及集成电路制造过程中硅片表面预处理工艺中最常用的技术之一 .钨的化学机械抛光是用钨坯获得硅片球面平整度的重要工艺 .其过程实际上是先将钨沉积到硅上已有的薄粘附层 -氮化钛上 ,然后进行化学机械抛光 .当抛光阶段接近终了时 ,氮化钛和钨表面将同时暴露在化学抛光液中形成电偶对 ,并在界面上发生腐蚀行为 ,从而影响硅片的球面平整度 ,降低半导体器件的性能与可靠性 .本文通过采用电化学直流极化技术 ,分别获得钨与氮化钛在 0 .0 1mol/LKNO3溶液中或含有三种典型的研磨剂 (H2 O2 ,KIO3,Fe(NO3) 3)溶液中的极化曲线 ,同时设计了一种特殊的电解槽以测量钨和氮化钛之间相互作用的电流 ,初步研究了 patterned硅片上钨和氮化钛界面形成电偶对时的腐蚀行为 .根据所测的钨和氮化钛电位可知 ,当钨和氮化钛表面同时暴露在抛光液中时将形成电偶对 ,氮化钛成为阴极 ,钨为阳极 ,并于界面发生电化学反应 ,表面的不均匀腐蚀将造成硅片平整度的降低 .结果表明 ,当溶液中含有H2 O2 时钨和氮化钛界面的腐蚀速度最大 ,而当溶液中含有Fe(NO3) 3时的钨和氮化钛界面则几乎不发?【abstract】Chemical-mechanical polishing (CMP) is a process whereby mechanical and chemical forces are combined to remove material from a wafer and polish it to a flat surface. Tungsten CMP is an important process to gain the global planarity of silicon wafers with tungsten (W) plugs. Tungsten is actually deposited on a thin adhesive layer of titanium nitride (TiN) on silicon. When close to the final stage of polishing , TiN and W will be simultaneously exposed to the polishing chemistry , forming a galvanic couple. The corrosion of TiN and W couple will result in different polish rate.This work studied the potential difference and galvanic currents on particulate contamination of the abrasive on the patterned surface and on corrosion behaviors of TiN and W. The polarization curves of TiN and W were,respectively ,obtained in 0.01 mol/L KNO3 solutions in the absence and presence of three typical oxidants ( H2O2 ,KIO3,Fe(NO3)3) by DC polarization technique. The corrosion otentials and galvanic currents were measured when TiN and W were placed in a specially designed electrochemical cell to form electro-couple. The preliminary results revealed that the corrosion rate of TiN-W electro-couple significantly increased in the presence of 4.5% H2O2 at pH 4.0,while reduced to the minimal in the presence of Fe(NO3)3 at pH 1.5. Agitationsignificantly enhanced the corrosion rate of TiN-W couple.
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机译：【中文摘要】化学机械抛光 (CMP)技术是同时利用化学和机械作用来获得固体表面亚微米尺度上平整性非常有效的方法 ,从 90年代初期起已成为制备高质量镜头和镜面及集成电路制造过程中硅片表面预处理工艺中最常用的技术之一 .钨的化学机械抛光是用钨坯获得硅片球面平整度的重要工艺 .其过程实际上是先将钨沉积到硅上已有的薄粘附层 -氮化钛上 ,然后进行化学机械抛光 .当抛光阶段接近终了时 ,氮化钛和钨表面将同时暴露在化学抛光液中形成电偶对 ,并在界面上发生腐蚀行为 ,从而影响硅片的球面平整度 ,降低半导体器件的性能与可靠性 .本文通过采用电化学直流极化技术 ,分别获得钨与氮化钛在 0 .0 1mol/LKNO3溶液中或含有三种典型的研磨剂 (H2 O2 ,KIO3,Fe(NO3) 3)溶液中的极化曲线 ,同时设计了一种特殊的电解槽以测量钨和氮化钛之间相互作用的电流 ,初步研究了 patterned硅片上钨和氮化钛界面形成电偶对时的腐蚀行为 .根据所测的钨和氮化钛电位可知 ,当钨和氮化钛表面同时暴露在抛光液中时将形成电偶对 ,氮化钛成为阴极 ,钨为阳极 ,并于界面发生电化学反应 ,表面的不均匀腐蚀将造成硅片平整度的降低 .结果表明 ,当溶液中含有H2 O2 时钨和氮化钛界面的腐蚀速度最大 ,而当溶液中含有Fe(NO3) 3时的钨和氮化钛界面则几乎不发?【abstract】Chemical-mechanical polishing (CMP) is a process whereby mechanical and chemical forces are combined to remove material from a wafer and polish it to a flat surface. Tungsten CMP is an important process to gain the global planarity of silicon wafers with tungsten (W) plugs. Tungsten is actually deposited on a thin adhesive layer of titanium nitride (TiN) on silicon. When close to the final stage of polishing , TiN and W will be simultaneously exposed to the polishing chemistry , forming a galvanic couple. The corrosion of TiN and W couple will result in different polish rate.This work studied the potential difference and galvanic currents on particulate contamination of the abrasive on the patterned surface and on corrosion behaviors of TiN and W. The polarization curves of TiN and W were,respectively ,obtained in 0.01 mol/L KNO3 solutions in the absence and presence of three typical oxidants ( H2O2 ,KIO3,Fe(NO3)3) by DC polarization technique. The corrosion otentials and galvanic currents were measured when TiN and W were placed in a specially designed electrochemical cell to form electro-couple. The preliminary results revealed that the corrosion rate of TiN-W electro-couple significantly increased in the presence of 4.5% H2O2 at pH 4.0,while reduced to the minimal in the presence of Fe(NO3)3 at pH 1.5. Agitationsignificantly enhanced the corrosion rate of TiN-W couple.
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