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Long-range proximity effect in Nb-based heterostructures induced by a magnetically inhomogeneous permalloy layer

机译：磁不均匀坡莫合金层在Nb基异质结构中的远距离邻近效应

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Cirillo C.; Voltan S.; Ilyina E.A.; Hernández J.M.; García-Santiago A.; Aarts J.; Attanasio C.;
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年度 2017
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1. Long-range proximity effect in Nb-based heterostructures induced by a magnetically inhomogeneous permalloy layer [J] . C Cirillo, S Voltan, E A Ilyina, New journal of physics . 2017 ,第2期

机译：磁不均匀坡莫合金层在Nb基异质结构中的远距离邻近效应
2. Proximity effect of magnetic permalloy nanoelements used to induce AMR changes in magnetic biosensor nanowires at specific receptor sites [J] . Iain Will, An Ding, Yongbing Xu Journal of magnetism and magnetic materials . 2015 ,第auga期

机译：磁性坡莫合金纳米元素的邻近效应，用于在特定受体部位诱导磁性生物传感器纳米线中的AMR变化
3. Controllable Magnetic Proximity Effect and Charge Transfer in 2D Semiconductor and Double-Layered Perovskite Manganese Oxide van der Waals Heterostructure [J] . Zhang Yan, Shinokita Keisuke, Watanabe Kenji, Advanced Materials . 2020 ,第50期

机译：2D半导体中可控磁性接近效应和电荷转移和双层钙钛矿锰氧化物van der waals异质结构
4. Proximity Effect and Interface Transparency in Nb-based S/N and S/F Layered Structures [C] . C. Attanasio NATO Advanced Study Institute on Nanoscale Devices-Fundamentals and Applications . 2006

机译：基于NB的S / N和S / F层结构的接近效应和接口透明度
5. Magnetic Proximity Effect inside Heterostructures of 2D Materials and Thin Films Adjacent to Magnetic Insulators [D] . Pinchuk, Igor Valerievich. 2018

机译：磁绝缘体邻近磁绝缘体附近的磁性邻近效应和磁绝缘体附近的薄膜
6. Long-range magnetic interactions and proximity effects in an amorphous exchange-spring magnet [O] . F. Magnus, M. E. Brooks-Bartlett, R. Moubah, -1

机译：非晶态交换弹簧磁体中的远距离磁相互作用和邻近效应
7. Van der Waals Heterostructures: Controllable Magnetic Proximity Effect and Charge Transfer in 2D Semiconductor and Double‐Layered Perovskite Manganese Oxide van der Waals Heterostructure (Adv. Mater. 50/2020) [O] . Yan Zhang, Keisuke Shinokita, Kenji Watanabe, 2020

机译：van der Waals异质结构：2D半导体中可控磁性接近效应和电荷转移，双层钙钛矿氧化物van der waals异质结构（ADV。Mater。50/2020）
8. Proximity Effects of Beryllium-Doped GaN Buffer Layers on the Electronic Properties of Epitaxial AlGaN/GaN Heterostructures [R] . Storm, D. F., Katzer, D. S., Deen, D. A., 2010

机译：铍掺杂GaN缓冲层对外延alGaN / GaN异质结构电子性质的邻近效应

Long-range proximity effect in Nb-based heterostructures induced by a magnetically inhomogeneous permalloy layer

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