Performance Evaluation of Fully-Depleted SOI MOSFET-Based Diodes Applied to Schenkel Circuit for RF-ID Chips

摘要

The feasibility of using the SOI-MOSFET as a quasi-diode to replace the Schottky-barrier diode (SBD) in the Schenkel circuit is examined by experiments and simulations. Unlike the SBD, the reverse-biased current of the SOI-MOSFET-based quasi-diode is much lower than its forward-biased current (I_F). The driving current of the quasi-diode (I_F) is increased by the excellent subthreshold swing value (S) of the SOI MOSFET ; the trade-off between boost-up efficiency (η) and I_F should be taken into account. An a. c. analysis indicates that the channel-doping level of the quasi-diode should be optimized to suppress the floating-body effect for RF applications.