首页> 外文OA文献 >Thermal Aging Behavior of Fine Pitch Palladium Coated Silver (PCS) Ball Bonds on Al Metallization
【2h】

Thermal Aging Behavior of Fine Pitch Palladium Coated Silver (PCS) Ball Bonds on Al Metallization

机译:铝上金属的细间距钯包覆银(PCS)球键合的热老化行为

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。

摘要

The high price of Au has motivated many to look for alternative bonding wire materials in the field of microelectronics packaging. In the present study, the reliability performance of palladium coated silver (PCS) wire in high temperature storage test (HTST) is carried out using 18 μm diameter fine pitch PCS wire. Fine pitch ball bonds are made on Al metallization, with bonded ball diameter (BBD) of 32 ± 0.5 μm and ball height (BH) of 8 ± 0.5 μm. The aging temperature used in HTST is 170 °C and both shear and pull test are used to evaluate the aged ball bonds at regular time intervals. The shear force increases from 9.9 gf at 96 h to 12.5 gf at 192 h, and remains almost constant until 1344 h, and starts dropping gradually until 10.9 gf at 1848 h. The pad lift percentage recorded in pull test gradually drops from 90 % at 96 h to 20 % at 1008 h, and increases to 90 % at 1848 h. The chip side fractography after shear test indicates that the main failure modes are through pad at 96 h, through ball bond at 504 h, and half of both at 168 h, respectively. Cross-sectional images show that the thickness of the intermetallic compound (IMC) layer growth follows parabolic relationship and the rate constant is 0.10 ± 0.02 μm/h½. Gaps are observed along the periphery of the ball bond interface where no IMC is observed. The IMCs are located at the center of the ball bond interface, and the width is 16.0–19.3 μm at 96 h and 17.2–22.7 μm at 1344 h, respectively.
机译:金的高价格促使许多人在微电子封装领域寻找替代的键合线材料。在本研究中,使用直径为18μm的细间距PCS导线进行了镀钯银(PCS)导线在高温存储测试(HTST)中的可靠性能。细间距球焊是在Al金属上进行的,焊球直径(BBD)为32±0.5μm,焊球高度(BH)为8±0.5μm。 HTST中使用的时效温度为170°C,同时采用剪切试验和拉力试验来定期评估老化的球键。剪切力从96 h的9.9 gf增加到192 h的12.5 gf,并一直保持恒定直到1344 h,并在1848 h逐渐下降直到10.9 gf。在拉力测试中记录的垫提升百分比从96小时的90%逐渐降低到1008小时的20%,并在1848小时增加到90%。剪切试验后的芯片侧面断裂图表明,主要的失效模式分别是在96 h处通过焊盘,在504 h处通过球键焊以及在168 h两者的一半。横截面图像显示,金属间化合物(IMC)层的厚度遵循抛物线关系,速率常数为0.10±0.02μm/ h1 / 2。沿球形结合界面的外围观察到间隙,其中未观察到IMC。 IMC位于球形键合界面的中心,在96 h处的宽度为16.0-19.3μm,在1344 h处的宽度为17.2-22.7μm。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
代理获取

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号