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High Performance, Low Cost Lateral Metal-Semiconductor-Metal Photodetector for Large Area Indirect X-Ray Imaging

机译:用于大面积间接X射线成像的高性能,低成本横向金属-半导体-金属光电探测器

摘要

The most promising technology for radiography is active matrix flat panel imaging systems (AMFPI). However, AMFPI systems are relatively expensive in comparison with conventional computed radiography (CR) systems. Therefore for general radiography applications low cost systems are needed, especially in hospitals and healthcare systems of the developing countries. The focus of this research is the fabrication and characterization of a low cost amorphous silicon metal-semiconductor-metal photodetector as a photosensitive element in a AMFPI systems. Metal-Semiconductor-Metal photodetectors (MSM-PD) are attractive as sensors due to their ease of fabrication and compatibility with thin film transistor fabrication process primarily because there is no p+ doped layer in comparison with conventional p-i-n photodiodes. We have reported low dark current lateral a-Si MSM-PD (lower than 20pA/mm2 ) with responsivity of 280mA/W and EQE of 65 percent to green light ( l = 525nm). These improvement are achieved by introduction of a PI blocking layer and operating the device at high electric field (15 V/µm). This new structure eliminates the need of p+ and n+ layers which makes this structure fully compatible with the a-Si:H TFT fabrication process and consequently a low cost flat panel imager. Further, in this study we have investigated the effect of the spacing and width of the comb structure in the proposed lateral a-Si MSM-PD to determine the best configuration. Moreover, a-Si MSM-PD with PI blocking layer shows a linear behaviour to the photon flux in the wide range of 200nW/cm2 - 300µW/cm2 intensity of the incoming light. In comparison to vertical p-i-n structures, the reported MSM lateral device shows gains in terms of dynamic range, ease of fabrication (no p+ layer) without any deterioration in EQE and responsivity. This results are promising and encourage the development of a-Si lateral MSM-PD for indirect conversion large area medical imaging applications and especially low cost flat.
机译:放射线照相术最有希望的技术是有源矩阵平板成像系统(AMFPI)。但是,与传统的计算机射线照相(CR)系统相比,AMFPI系统相对昂贵。因此,对于一般的放射线照相应用而言,需要低成本的系统,尤其是在发展中国家的医院和医疗系统中。这项研究的重点是作为AMFPI系统中的光敏元件的低成本非晶态硅金属-半导体-金属光电探测器的制造和表征。金属-半导体-金属光电探测器(MSM-PD)作为传感器很有吸引力,因为它们易于制造并且与薄膜晶体管制造工艺兼容,这主要是因为与传统的p-i-n光电二极管相比,没有p +掺杂层。我们报告了低暗电流横向a-Si MSM-PD(低于20pA / mm2),对绿光(l = 525nm)的响应度为280mA / W,EQE为65%。这些改进是通过引入PI阻挡层并在高电场(15 V / µm)下操作该器件来实现的。这种新结构消除了对p +和n +层的需求,这使该结构与a-Si:H TFT制造工艺完全兼容,因此与低成本的平板成像器兼容。此外,在这项研究中,我们研究了所提出的横向a-Si MSM-PD中梳状结构的间距和宽度的影响,以确定最佳配置。此外,具有PI阻挡层的a-Si MSM-PD在200nW / cm2-300µW / cm2的入射光强度范围内显示出对光子通量的线性行为。与垂直p-i-n结构相比,所报道的MSM侧向器件在动态范围,易于制造(无p +层)方面表现出了提高,而EQE和响应度均没有任何下降。这一结果是有希望的,并鼓励开发用于间接转换大面积医学成像应用,尤其是低成本平板的a-Si横向MSM-PD。

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    Ghanbarzadeh Sina;

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  • 年度 2013
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