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An audio FIR-DAC in a BCD process for high power Class-D amplifiers

机译:BCD处理中的音频FIR-DAC,用于大功率D类放大器

摘要

A 322 coefficient semi-digital FIR-DAC using a 1-bit PWM input signal was designed and implemented in a high voltage, audio power bipolar CMOS DMOS (BCD) process. This facilitates digital input signals for an analog class-D amplifier in BCD. The FIR-DAC performance depends on the ISI-resistant nature of this PWM-signal. An impulse response with only positive coefficients was chosen, because of its resistance to deadzone and mismatch. With a DAC current of 0.5 mA, the dynamic range is 111 dB (A-weighted), with SINAD = 103 dB (A-weighted). The current consumption is 1mA for the analog part and 4.8 mA for the digital part. The power consumption is 29 mW at Vdd = 5 V and the chip area is 2 mm2 including the reference diode that can be shared by more channels
机译:设计并使用高压,音频功率双极CMOS DMOS(BCD)工艺实现了使用1位PWM输入信号的322系数半数字FIR-DAC。这有助于BCD中模拟D类放大器的数字输入信号。 FIR-DAC的性能取决于此PWM信号的耐ISI特性。选择了仅具有正系数的脉冲响应,因为它对死区和失配具有抵抗力。 DAC电流为0.5 mA时,动态范围为111 dB(A加权),SINAD = 103 dB(A加权)。模拟部分的电流消耗为1mA,数字部分的电流消耗为4.8mA。在Vdd = 5 V时,功耗为29 mW,芯片面积为2 mm2,包括可由更多通道共享的参考二极管

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