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Advanced Si solid phase crystallization for vertical channel in vertical NANDs

机译：用于垂直NaND中垂直沟道的高级si固相结晶

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Sangsoo Lee; Yong-Hoon Son; Kihyun Hwang; Yoo Gyun Shin; Euijoon Yoon;
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年度 2014
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1. Advanced Si solid phase crystallization for vertical channel in vertical NANDs [J] . Sangsoo Lee, Yong-Hoon Son, Kihyun Hwang, APL Materials . 2014,第7期

机译：垂直NAND中垂直通道的高级Si固相结晶
2. A phase I trial of vertical inhibition of IGF signalling using cixutumumab, an anti-IGF-1R antibody, and selumetinib, an MEK 1|[sol]|2 inhibitor, in advanced solid tumours [J] . B A Wilky, M A Rudek, S Ahmed, British Journal of Cancer . 2015,第1期

机译：在晚期实体瘤中使用西妥妥珠单抗（抗IGF-1R抗体）和selumetinib（MEK 1 | [sol] | 2抑制剂）垂直抑制IGF信号的I期试验
3. A phase I trial of vertical inhibition of IGF signalling using cixutumumab, an anti-IGF-1R antibody, and selumetinib, an MEK 1/2 inhibitor, in advanced solid tumours [J] . B A Wilky, M A Rudek, S Ahmed, British Journal of Cancer . 2015,第1期

机译：使用抗IGF-1R抗体cixutumumab和MEK 1/2抑制剂selumetinib在晚期实体瘤中垂直抑制IGF信号的I期试验
4. Metal-Assisted Solid-Phase Crystallization Process for Vertical Monocrystalline Si Channel in 3D Flash Memory [C] . Hidenori Miyagawa, Haruka Kusai, Riichiro Takaishi, International Electron Devices Meeting . 2019

机译：3D闪存中垂直单晶硅沟道的金属辅助固相结晶工艺
5. The study of the hydrodynamic characteristics of vertical upflow gas-solids suspension in the dilute and dense phase regimes [D] . Mok, Steven Lai-Kwok. 1991

机译：稀态阶段垂直上流气固悬浮液的流体动力学特性研究
6. A phase I trial of vertical inhibition of IGF signalling using cixutumumab an anti-IGF-1R antibody and selumetinib an MEK 1/2 inhibitor in advanced solid tumours [O] . B A Wilky, M A Rudek, S Ahmed, 2015

机译：使用抗IGF-1R抗体cixutumumab和MEK 1/2抑制剂selumetinib在晚期实体瘤中垂直抑制IGF信号的I期试验
7. A phase I trial of vertical inhibition of IGF signalling using cixutumumab, an anti-IGF-1R antibody, and selumetinib, an MEK 1/2 inhibitor, in advanced solid tumours [O] . B A Wilky, M A Rudek, S Ahmed, 2014

机译：使用Cixutumumab，抗IGF-1R抗体和Selumetinib，MEK 1/2抑制剂，在先进的实体瘤中试验IGF信号传导的垂直抑制的IGF信号的试验

Advanced Si solid phase crystallization for vertical channel in vertical NANDs

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