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Performance of a Double Gate Nanoscale MOSFET (DG-MOSFET) Based on Novel Channel Materials

机译：基于新型通道材料的双栅纳米mOsFET（DG-mOsFET）性能

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Rakesh Prasher; Devi Dass; Rakesh Vaid;
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年度 2013
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1. Influence of Channel Length and High-K Oxide Thickness on Subthreshold DC Performance of Graded Channel and Gate Stack DG-MOSFETs [J] . Adak Sarosij, Swain Sanjit Kumar, Dutta Arka, Nano: brief reports and reviews . 2016,第9期

机译：沟道长度和高K氧化物厚度对渐变沟道和栅堆叠DG-MOSFET亚阈值直流性能的影响
2. Influence of channel length and high-K oxide thickness on subthreshold analog/RF performance of graded channel and gate stack DG-MOSFETs [J] . Swain Sanjit Kumar, Dutta Arka, Adak Sarosij, Microelectronics & Reliability . 2016,第JUNa期

机译：沟道长度和高K氧化物厚度对渐变沟道和栅极堆叠DG-MOSFET亚阈值模拟/ RF性能的影响
3. Performance Analysis of High-k Material Gate Stack Based Nanoscale Junction Less Double Gate MOSFET [J] . Dhiman Gaurav, Pourush Rajeev, Ghosh P. K. Materials Focus . 2018,第2期

机译：基于高k材料栅堆叠的纳米级无结双栅极MOSFET的性能分析
4. Dielectric Pocket (DP) Based Channel Region of the Junction-Less Dual Material Double Gate (JLDMDG) MOSFET for Enhanced Analog/RF Performance [C] . Amrish Kumar, Abhinav Gupta, Sanjeev Rai International conference on VLSI, communication, and signal processing . 2020

机译：基于介电袋（DP）的连接型双材料双栅极（JLDMDG）MOSFET，用于增强模拟/ RF性能
5. Analysis & Design of Radio Frequency Wireless Communication Integrated Circuits with Nanoscale Double Gate MOSFETs [D] . Laha, Soumyasanta 2015

机译：纳米级双栅极MOSFET射频无线通信集成电路的分析与设计
6. Performance of arsenene and antimonene double-gate MOSFETs from first principles [O] . Giovanni Pizzi, Marco Gibertini, Elias Dib, -1

机译：首要原理的砷和锑双栅极MOSFET的性能
7. Performance of a Double Gate Nanoscale MOSFET (DG-MOSFET) Based on Novel Channel Materials [O] . Rakesh Prasher, Devi Dass, Rakesh Vaid 2013

机译：基于新型沟道材料的双栅极纳米级MOSFET（DG-MOSFET）的性能
8. Impact of Unintentional Discrete Charges in a Nominally Undoped Channel of a Thin Body Double Gate MOSFET: Classical to Full Quantum Simulation [R] . Martinez, A. , Barker, J. R. , Svizhenko, A. , 2006

机译：无意离散电荷对薄体双栅极mOsFET的标称无效通道的影响：经典到全量子模拟

Performance of a Double Gate Nanoscale MOSFET (DG-MOSFET) Based on Novel Channel Materials

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