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Novel 3D electro-thermal robustness optimization approach of super junction power MOSFETs under unclamped inductive switching

机译：非交错感应开关下超结功率mOsFET的新型三维电热鲁棒性优化方法

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J. Rhayem; A. Wieers; A. Vrbicky; P. Moens; A. Villamor-Baliarda; J. Roig; P. Vanmeerbeek; A. Irace; M. Riccio; M. Tack;
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年度 2012
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正文语种 eng
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1. Repetitive Unclamped-Inductive-Switching-Induced Electrical Parameters Degradations and Simulation Optimizations for 4H-SiC MOSFETs [J] . Siyang Liu, Chunde Gu, Jiaxing Wei, Electron Devices, IEEE Transactions on . 2016,第11期

机译：4H-SiC MOSFET的重复非钳位感应开关感应电参数降级和仿真优化
2. Dynamic avalanche behavior of power MOSFETs and IGBTs under unclamped inductive switching conditions [J] . Lu J., Tian X., Lu S., Journal of Semiconductors . 2013,第3期

机译：在未钳位的电感开关条件下功率MOSFET和IGBT的动态雪崩行为
3. Investigation of Maximum Junction Temperature for 4H-SiC MOSFET During Unclamped Inductive Switching Test [J] . JUNJIE AN, MASAKI NAMAI, DAI OKAMOTO, Electronics and communications in Japan . 2018,第1期

机译：4H-SiC MOSFET非钳位电感开关测试期间最高结温的研究
4. Novel 3D electro-thermal robustness optimization approach of super junction power MOSFETs under unclamped inductive switching [C] . Rhayem J. Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM), 2012 28th Annual IEEE . 2012

机译：非钳位电感开关下超级结功率MOSFET的新型3D电热鲁棒性优化方法
5. Design, Analysis, and Optimization of 1.2 kV 4H-SiC Planar-Gate Power MOSFETs for Improved High Frequency Switching [D] . Han, Kijeong. 2019

机译：1.2 kV 4H-SiC平面栅极功率MOSFET的设计，分析和优化，用于改进的高频切换
6. Multi-objective optimization of MOSFETs channel widths and supply voltage in the proposed dual edge-triggered static D flip-flop with minimum average power and delay by using fuzzy non-dominated sorting genetic algorithm-II [O] . Farshid Keivanian, Nasser Mehrshad, Abolfazl Bijari -1

机译：拟议的双边沿触发静态D型触发器中的MOSFET沟道宽度和电源电压的多目标优化采用模糊非支配排序遗传算法II
7. Novel 3D Electro-Thermal Robustness Optimization Approach of Super Junction Power MOSFETs under Unclamped Inductive Switching [O] . J. Rhayem, A. Wieers, A. Vrbicky, 2012

机译：非钳位电感开关下超级结功率mOsFET的三维电热稳健性优化方法
8. Long-Term Reliability of a Hard-Switched Boost Power Processing Unit Utilizing SiC Power MOSFETs. [R] . Ikpe, S. A., Lauenstein, J., Chen, Y., 2016

机译：利用siC功率mOsFET的硬开关Boost功率处理单元的长期可靠性。

Novel 3D electro-thermal robustness optimization approach of super junction power MOSFETs under unclamped inductive switching

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