We present the design of a concentric tube (CT) reactor for roll-to-roll chemical vapor deposition (CVD) on flexible substrates, and its application to continuous production of graphene on copper foil. In the CTCVD reactor, the thin foil substrate is helically wrapped around the inner tube, and translates through the gap between the concentric tubes. We use a bench-scale prototype machine to synthesize graphene on copper substrates at translation speeds varying from 25 mm/min to 500 mm/min, and investigate the influence of process parameters on the uniformity and coverage of graphene on a continuously moving foil. At lower speeds, high-quality monolayer graphene is formed; at higher speeds, rapid nucleation of small graphene domains is observed, yet coalescence is prevented by the limited residence time in the CTCVD system. We show that a smooth isothermal transition between the reducing and carbon-containing atmospheres, enabled by injection of the carbon feedstock via radial holes in the inner tube, is essential to high-quality roll-to-roll graphene CVD. We discuss how the foil quality and microstructure limit the uniformity of graphene over macroscopic dimensions. We conclude by discussing means of scaling and reconfiguring the CTCVD design based on general requirements for 2-D materials manufacturing.
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机译:我们介绍了用于在柔性基板上进行卷对卷化学气相沉积(CVD)的同心管(CT)反应器的设计,并将其应用于在铜箔上连续生产石墨烯的应用。在CTCVD反应器中,薄箔基板螺旋形地包裹在内管周围,并通过同心管之间的间隙平移。我们使用台式原型机以25 translationmm / min到500 mm / min的平移速度在铜基板上合成石墨烯,并研究工艺参数对连续移动箔片上石墨烯均匀性和覆盖率的影响。以较低的速度形成高质量的单层石墨烯。在较高的速度下,观察到小石墨烯域的快速成核,但由于在CTCVD系统中的有限停留时间而阻止了聚结。我们表明,通过内管中的径向孔注入碳原料,能够在还原气氛和含碳气氛之间实现平稳的等温转变,这对于高质量的卷对卷石墨烯CVD是必不可少的。我们讨论了箔的质量和微观结构如何在宏观尺寸上限制石墨烯的均匀性。最后,我们根据二维材料制造的一般要求,讨论了按比例缩放和重新配置CTCVD设计的方法。
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