Fabrication and testing of dual gate p-channel MOSFETs

摘要

In this thesis, I fabricated and tested p-channel dual gate MOSFETs that will be used to make conductance and resistance measurements of nanocrystalline solids. Using MOSFETs with narrow gates, we can measure the resistance of these nanocrystals, which are typically extremely high. The group had previously used n-channel MOSFETs, and this project tests the potential for using p-channel devices. This thesis discusses the fabrication techniques and challenges, as well as G-Vg, threshold voltage, and hole mobility measurements from wide gate devices, which are used as a proof of concept for the narrow gate devices. Future work in the group will finish fabricating and testing narrow gate devices.