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Growth of Large-Area Single- and Bi-Layer Graphene by Controlled Carbon Precipitation on Polycrystalline Ni Surfaces

机译:多晶Ni表面控制碳沉淀法制备大面积单层和双层石墨烯

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摘要

We report graphene films composed mostly of one or two layers of graphene grown by controlled carbon precipitation on the surface of polycrystalline Ni thin films during atmospheric chemical vapor deposition (CVD). Controlling both the methane concentration during CVD and the substrate cooling rate during graphene growth can significantly improve the thickness uniformity. As a result, one- or two- layer graphene regions occupy up to 87% of the film area. Single layer coverage accounts for 5%–11% of the overall film. These regions expand across multiple grain boundaries of the underlying polycrystalline Ni film. The number density of sites with multilayer graphene/graphite (>2 layers) is reduced as the cooling rate decreases. These films can also be transferred to other substrates and their sizes are only limited by the sizes of the Ni film and the CVD chamber. Here, we demonstrate the formation of films as large as 1 in2. These findings represent an important step towards the fabrication of large-scale high-quality graphene samples.
机译:我们报告了在大气化学气相沉积(CVD)过程中,石墨烯薄膜主要由一层或两层石墨烯组成,该石墨烯薄膜是通过在多晶Ni薄膜表面上控制碳沉积而生长的。控制CVD期间的甲烷浓度和石墨烯生长期间的基板冷却速率都可以显着提高厚度均匀性。结果,一层或两层石墨烯区域最多占据了膜面积的87%。单层覆盖率占整个电影的5%–11%。这些区域跨越下面的多晶镍膜的多个晶界扩展。多层石墨烯/石墨(> 2层)的位点数密度随着冷却速率的降低而降低。这些膜也可以转移到其他衬底上,它们的大小仅受Ni膜和CVD室的大小限制。在这里,我们演示了最大为1 in2的薄膜的形成。这些发现代表了朝着大规模生产高质量石墨烯样品迈出的重要一步。

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