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A low-noise bandgap voltage reference employing dynamic element matching

机译:采用动态元件匹配的低噪声带隙基准电压源

摘要

Bandgap voltages references are widely used in IC design, but are sensitive to low-frequency noise and component mismatch. This thesis describes the design and testing of a new IC voltage reference that targets these issues through three dynamic element matching (DEM) subsystems. The first is a chopper OTA, and the second two are component rotation schemes: one to exchange the positions of two critical resistors, and the second to cycle through all BJTs, periodically selecting each to participate as the "1" transistor of the N:1 bandgap ratio. Practical designs that address the various switching issues typically associated with DEM, such as glitch and clock drift, are described. Analytic expressions for the effects of noise and mismatch throughout the bandgap reference are derived, along with expressions for calculating the improvement that can be achieved by DEM. A test chip was implemented in a 0.25[mu]m BiCMOS process; with its three DEM subsystems enabled it is shown to achieve a 20x 1/f noise improvement and a 34x mismatch error improvement.
机译:带隙电压基准在IC设计中被广泛使用,但对低频噪声和元件失配敏感。本文介绍了通过三个动态元件匹配(DEM)子系统针对这些问题的新型IC参考电压的设计和测试。第一个是斩波OTA,第二个是组件旋转方案:一个用于交换两个关键电阻器的位置,第二个用于循环所有BJT,定期选择每个BJT作为N的“ 1”晶体管: 1带隙比。描述了解决通常与DEM相关的各种开关问题(例如毛刺和时钟漂移)的实用设计。推导了整个带隙参考中的噪声和失配影响的解析表达式,以及用于计算可以通过DEM实现的改进的表达式。测试芯片是在0.25μmBiCMOS工艺中实现的。通过启用三个DEM子系统,可以实现20x 1 / f的噪声改善和34x不匹配误差的改善。

著录项

  • 作者

    Herbst Steven (Steven G.);

  • 作者单位
  • 年度 2011
  • 总页数
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类

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