Response of nonlinear devices to a pulsed signal and gated noise

机译：非线性器件对脉冲信号和门控噪声的响应

代理获取

本网站仅为用户提供外文OA文献查询和代理获取服务，本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文，但由于OA文献来源多样且变更频繁，仍可能出现获取不到、文献不完整或与标题不符等情况，如果获取不到我们将提供退款服务。请知悉。

页面导航

摘要
著录项
引文网络
相似文献
相关主题

摘要

D. B. Armstrong.

机译：D. B.阿姆斯特朗。

著录项

作者

展开▼
作者单位

展开▼
年度 1951
总页数
原文格式 PDF
正文语种 eng
中图分类

相似文献

外文文献
中文文献
专利

1. Visual threshold is set by linear and nonlinear mechanisms in the retina that mitigate noise How neural circuits in the retina improve the signal-to-noise ratio of the single-photon response [J] . Pahlberg Johan, Sampath Alapakkam P. . BioEssays : . 2011,第6期

机译：视觉阈值是由视网膜中减轻噪音的线性和非线性机制设置的，视网膜中的神经回路如何改善单光子响应的信噪比
2. Large Signal-to-noise-ratio Enhancement Of Ultrashort Pulsed Optical Signals Using A Power-symmetric Nonlinear Optical Loop Mirror With Output Polarisation Selection [J] . O. Pottiez, B. Ibarra-Escamilla, E.A. Kuzin Optical fiber technology . 2009,第2期

机译：使用输出偏振选择的功率对称非线性光学环形镜提高超短脉冲光信号的大信噪比
3. Considerations on nonlinearity measurement with high signal-to-noise ratio for RF surface and bulk acoustic wave devices [J] . Kodaira Ryosuke, Omori Tatsuya, Hashimoto Ken-ya, Japanese journal of applied physics . 2015,第7S1期

机译：对射频表面和体声波器件进行高信噪比非线性测量的考虑
4. Nonlinear response of lithium niobate crystals investigated with femtosecond light pulses [C] . O. Beyer, D. Maxein, K. Buse, International Conference on Photorefractive Effects, Materials, and Devices; 20050719-23; Sanya(CN) . 2005

机译：飞秒光脉冲研究铌酸锂晶体的非线性响应
5. The nonlinear phototaxis signaling network of Chlamydomonas investigated by observing ciliary responses of individual cells to green and red light. [D] . Josef, Keith. 2005

机译：通过观察单个细胞对绿色和红色光的纤毛响应，研究了衣藻的非线性趋光信号网络。
6. Influence of subthreshold nonlinearities on signal-to-noise ratio and timing precision for small signals in neurons: minimal model analysis [O] . Gytis Svirskis, John Rinzel -1

机译：亚阈值非线性对神经元中小信号的信噪比和定时精度的影响：最小模型分析
7. Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by pulsed I-V and low frequency noise measurements [O] . Karboyan Serge, Tartarin Jean-Guy, Rzin M, 2013

机译：栅极漏电流对alGaN / GaN HEmT的影响由低频噪声和脉冲电测量证明，栅极漏电流对alGaN / GaN HEmT的影响由脉冲I-V和低频噪声测量证明

Response of nonlinear devices to a pulsed signal and gated noise

摘要

著录项

引文网络

相似文献

相关主题

期刊订阅