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Growth and characterization of ZnSe by metalorganic and gas source molecular beam epitaxy

机译：金属有机和气源分子束外延生长Znse的表征

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by Christopher Alan Coronado.

机译：克里斯托弗·艾伦·科罗纳多（Christopher Alan Coronado）。

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Coronado Christopher Alan;
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年度 1994
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原文格式 PDF
正文语种 eng
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专利

1. Growth and characterization of codoping of ZnSe : Cl with Li grown by molecular beam epitaxy on GaAs [J] . Yoneta M., Nanami K., Ohishi M., Physica, B. Condensed Matter . 2001,第0期

机译：GaAs分子束外延生长ZnSe：Cl与Li共掺杂的生长及其表征。
2. Growth and characterization of dilute nitride GaNxP1−x nanowires and GaNxP1−x/GaNyP1−y core/shell nanowires on Si (111) by gas source molecular beam epitaxy [J] . Sukrittanon S., Kuang Y.J., Dobrovolsky A., Applied Physics Letters . 2014,第7期

机译：稀氮化物GaN x P 1-x 纳米线和GaN x P 1-x / GaN的生长和表征气源分子束外延作用在Si（111）上的 y P 1-y 核/壳纳米线
3. Growth and characterization of dilute nitride GaN_xP_(1-x) nanowires and GaN_xP_(1-x)/GaN_yP_(1-y) core/shell nanowires on Si (111) by gas source molecular beam epitaxy [J] . S. Sukrittanon, Y. J. Kuang, A. Dobrovolsky, Applied Physics Letters . 2014,第7期

机译：气源分子束外延在氮化硅（111）上生长和表征稀氮化物GaN_xP_（1-x）纳米线和GaN_xP_（1-x）/ GaN_yP_（1-y）核/壳纳米线
4. Characterization of GaN grown with a high growth rate by RF-radical source molecular beam epitaxy [C] . International conference on silicon carbide and related materials . 1996

机译：RF - 自由基源分子束外延具有高生长速率的Ga的表征
5. Growth and characterization of high-speed C-doped base InP/InGaAs heterojunction bipolar transistors using metalorganic molecular beam epitaxy. [D] . Thomas, Sunil. 1998

机译：利用金属有机分子束外延生长和表征高速掺C的基极InP / InGaAs异质结双极晶体管。
6. Self-assembled GaInNAs/GaAsN quantum dot lasers: solid source molecular beam epitaxy growth and high-temperature operation [O] . SF Yoon, CY Liu, ZZ Sun, 2006

机译：自组装GaInNAs / GaAsN量子点激光器：固体源分子束外延生长和高温操作
7. Growth and characterization of dilute nitride GaNxP1−x nanowires and GaNxP1−x/GaNyP1−y core/shell nanowires on Si (111) by gas source molecular beam epitaxy [O] . Sukrittanon, S., Kuang, Y. J., Dobrovolsky, Alexandr, 2014

机译：气源分子束外延在Si（111）上生长和稀释氮化物GaNxP1-x纳米线和GaNxP1-x / GaNyP1-y核/壳纳米线的特性

Growth and characterization of ZnSe by metalorganic and gas source molecular beam epitaxy

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